imx9 transistors general purpose transistor (isolated dual transistors) imx9 z z z z features 1) two 2sd2114k chips in a smt package. 2) mounting possible with smt3 automatic mounting machine. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. z z z z structure epitaxial planar type npn silicon transistor the following characteristics apply to both tr 1 and tr 2 . z z z z external dimensions (units : mm) rohm : smt6 eiaj : sc-74 abbreviated symbol: x9 (1) (2) (3) 0.3 + 0.1 ? 0.05 1.6 2.8 0.2 + 0.2 ? 0.1 (6) (5) (4) 0.95 0.95 1.9 0.2 2.9 0.2 1.1 + 0.2 0.8 0.1 ? 0.1 0~0.1 0.3~0.6 0.15 ? 0.06 + 0.1 all terminals have same dimensions z z z z absolute maximum ratings (ta = 25 c) z z z z equivalent circuit parameter symbol limits unit v cbo 25 v v ceo 20 v v ebo 12 v i c 500 ma tj 150 c tstg ? 55~ + 150 c pd 300(total) mw ? collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 200mw per element must not be exceeded. tr 2 tr 1 (4) (5) (6) (3) (2) (1) z z z z electrical characteristics (ta = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) min. 25 20 12 ? ? 560 ? ? ? ? ? ? ? 0.18 ? ? ? 0.5 0.5 2700 0.4 v i c = 10 a i c = 1ma i e = 10 a v cb = 20v v eb = 10v v ce = 3v, i c = 10ma i c /i b = 500ma/20ma v v a a ? v typ. max. unit conditions f t ron cob ? ? ? 350 0.8 8 ? ? ? v ce = 10v, i e =? 50ma, f = 100mhz i b = 1ma, v i = 100mvrms, f = 1khz v cb = 10v, i e = 0a, f = 1mhz mhz ? pf collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency output capacitance output on-resistance collector-emitter saturation voltage
imx9 transistors z z z z packaging specifications imx9 part no. t110 3000 packaging type code basic ordering unit (pieces) taping z z z z electrical characteristic curves 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 ta=25 c 0.2 a 0.4 a 0.6 a 0.8 a 1.0 a 1.2 a 1.4 a 1.6 a i b =0 1.8 a 2.0 a collector current : i c (ma) collector to emitter voltage : v ce (v) fig.1 grounded emitter output characteristics( ) 0 200 400 600 800 1000 0246810 ta = 25 c measured using pulse current. 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma 2.0ma i b = 0ma collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( ? ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 2 5 10 20 50 100 200 500 1000 collector current : i c (ma) base to emitter voltage : v be (v) fig.3 grounded emitter propagation characteristics v ce = 3v measured using pulse current. 25 c ? 25 c ta=100 c 1 2 5 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 2000 5000 10000 ta = 25 c measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( ) 3v v ce = 5v 1v 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 v ce = 3v measured using pulse current. dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ? ) 25 c ? 25 c ta = 100 c 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 500 1000 ta = 25 c measured using pulse current. 10 25 50 i c /i b = 100 collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.6 collector-emitter saturation voltage vs. collector current ( )
imx9 transistors collector saturation voltage : v ce(sat) (mv) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current ( ? ) 1 2 2000 1000 200 500 100 20 50 10 5 2 5 10 20 50 100 200 5001000 i c / i b = 25 measured using pulse current. ta = 100 c 25 c ? 25 c base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.8 base-emitter saturation voltage vs. collector current ( ) 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 ta = 25 c pulsed i c /i b = 10 25 50 100 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 50 20 10 base saturation voltage : v be(sat) (mv) collector current : i c (ma) fig.9 base-emitter saturation voltage vs. collector current ( ? ) measured using pulse current. l c /l b = 10 25 c 100 c ta =? 25 c emitter current : i e (ma) transition frequency : f t (mhz) fig.10 gain bandwidth product vs. emitter current ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 200 ? 500 ? 1000 10000 5000 2000 500 200 1000 100 20 50 10 ta = 25 c v ce = 10v measured using pulse current. 0.1 0.2 0.5 1 2 5 10 20 50 100 collector output capacitance : cob (pf) collector to base voltage : v cb (v) fig.11 collector output capacitance vs. collector-base voltage 100 200 500 1000 10 20 50 2 5 1 ta = 25 c f = 1mhz i e = 0a 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 on resistance : ron ( ? ) base current : i b (ma) fig.12 output-on resistance vs. base current 0.1 0.2 0.5 1 2 5 10 20 50 100 ta=25 c f=1khz vi=100mv( rms) r l =1k ? z z z z ron measurement circuit ron = r l v 0 vi-v 0 r l = 1k ? i b output v 0 input vi 1khz 100mv(rms) v
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